| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a most suitable High-k gate insulating film without causing an increase in STI width and a decrease in reliability. Ž<P>SOLUTION: A High-k insulating film 103, an N-type transistor cap film 104 and a metal containing film 105 are deposited sequentially over the whole surface of a semiconductor substrate 101 including an N-type transistor area Rn and a P type transistor area Rp. A P-type transistor cap film 108 is formed by introducing an ion 107 to the N-type transistor cap film 104 located in the P-type transistor area Rp. After depositing a polysilicon film 111 over the metal containing film 105, an N-type transistor gate electrode 113, and a P-type transistor gate electrode 114 are formed by patterning. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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