| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device causing no interfacial delamination between a gate electrode and an interlayer insulating film and no damage to an irradiated object regardless of high speed heating by light irradiation for activation. Ž<P>SOLUTION: The semiconductor manufacturing method includes the steps of forming a semiconductor layer 5 on a substrate 2, forming a gate insulating film 6 on the semiconductor layer 5, forming a high melting point metal film on the gate insulating film 6, forming a titanium film on the high melting point metal film, patterning the high melting point metal film and the titanium film to form the gate electrode 8, injecting impurities into the semiconductor layer 5 using the gate electrode 8 as a mask, forming the interlayer insulating film 9 to cover the gate electrode 8, forming a light absorbing film 10 of a metal having a melting point higher than that of the semiconductor layer 5 on the interlayer insulating film 9 and irradiating the light absorbing film 10 with light to activate the impurities in the semiconductor layer 5 with heat generated in the light absorbing film 10 by absorbing the light. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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