发明名称 REFERENCE VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR ELEMENT HAVING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a reference voltage generating circuit which operates with lower voltage than a band gap voltage and low-power consumption and generates high precision reference voltage. Ž<P>SOLUTION: The difference voltage V<SB>S</SB>which has a positive temperature dependency is converted into the second current I<SB>2</SB>, by performing feeding back using the differential amplifier A1 so as to apply a same voltage to both ends of the first diode Da and to the point between the second diode Db and the first resistor R<SB>1</SB>which are series-connected. The forward voltage which has a negative temperature dependency is converted into the third current I<SB>3</SB>, by connecting the third resistor R<SB>3A</SB>to the second diode Db and connecting the fourth resistor R<SB>3B</SB>to the first diode Da. Then, the first current I<SB>1</SB>which has no temperature dependencies is generated by combining the second current I<SB>2</SB>and the third current I<SB>3</SB>. Further, the output voltage Vout is generated by connecting the third resistor R<SB>3A</SB>and the fourth resistor R<SB>3B</SB>to the output node N3 and by flowing a current I<SB>1</SB>+I<SB>3</SB>×2 through the second resistor R<SB>2</SB>. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010039648(A) 申请公布日期 2010.02.18
申请号 JP20080200228 申请日期 2008.08.01
申请人 SONY CORP 发明人 NAKAJIMA KATSUYA
分类号 G05F3/24 主分类号 G05F3/24
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