| 摘要 |
A light emitting device according to one embodiment of the invention comprises: a first conductivity type semiconductor layer; an active layer over the first conductivity type semiconductor layer; a second conductivity type semiconductor layer over the active layer; a first passivation layer surrounding the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer; a second connection layer passing through the first passivation layer to be electrically connected with the second conductivity type semiconductor layer; a first light extraction structure layer over the first passivation layer and the second connection layer; a first electrode layer electrically connected with the first conductivity type semiconductor layer; and a second electrode layer over the first light extraction structure layer. |
