摘要 |
<p>A lithographic apparatus (1) includes a radiation source (SO) configured to produce extreme ultraviolet radiation, the radiation source (SO) including a chamber (210) in which a plasma (225) is generated; a collector mirror (270) configured to reflect radiation emitted by the plasma (225); and a debris mitigation system (230) including a gas supply system (235) configured to supply a first gas flow (240) toward the plasma, the first gas flow (240) being selected to thermalize debris generated by the plasma (225), and a plurality of gas manifolds (247) arranged at a location proximate the collector mirror (270), the gas manifolds configured to supply a second gas flow (250) in the chamber (210), the second gas flow (250) being directed toward the plasma (225) to prevent thermalized debris from depositing on the collector mirror (270).</p> |
申请人 |
ASML NETHERLANDS B.V.;BANINE, VADIM, YEVGENYEVICH;LOOPSTRA, ERIK, ROELOF;MOORS, JOHANNES, HUBERTUS, JOSEPHINA |
发明人 |
BANINE, VADIM, YEVGENYEVICH;LOOPSTRA, ERIK, ROELOF;MOORS, JOHANNES, HUBERTUS, JOSEPHINA |