发明名称 |
A HARDMASK PROCESS FOR FORMING A REVERSE TONE IMAGE |
摘要 |
<p>The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.</p> |
申请公布号 |
WO2010018430(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
WO2009IB05146 |
申请日期 |
2009.03.30 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
ABDALLAH, DAVID J.;DAMMEL, RALPH R.;NEISSER, MARK |
分类号 |
G03F7/40;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|