摘要 |
This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (RRAM) that use techniques to provide a memory device with more predictable operation. In particular, forming voltage required by particular designs may be reduced through the use of a barrier layer, a reverse polarity forming voltage pulse, a forming voltage pulse where electrons are injected from a lower work function electrode, or through the use of an anneal in a reducing environment. One or more of these techniques may be applied, depending on desired application and results. |
申请人 |
INTERMOLECULAR, INC.;WANG, YUN;KUMAR, PRAGATI;CHIANG, TONY, P.;PHATAK, PRASHANT |
发明人 |
WANG, YUN;KUMAR, PRAGATI;CHIANG, TONY, P.;PHATAK, PRASHANT |