| 摘要 |
PROBLEM TO BE SOLVED: To properly bring out the performance of both of a superjunction structure and a vertical MOSFET, without being affected by the arrangement pitch of the other. SOLUTION: For a trench groove 121 for a pair of p-n pillars and a trench groove 154 for a gate electrode 158 of a vertical MOSFET 150, an angle formed by both and a crystal surface appearing on a side (sidewall) of each trench groove are prescribed so that transistor pitch is narrowed and the switching characteristics of the vertical MOSFET 150 are improved, without being affected by the arrangement pitch of the other. The trench groove 121 and the trench groove 154 are crossed at an angle of 45 degrees and are arranged in a stripe shape each. The trench groove 121 is formed so that a (110) plane appears on a sidewall as a crystal surface, and the trench groove 154 is formed so that a (100) plane appears on a sidewall. COPYRIGHT: (C)2010,JPO&INPIT |
