| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is low in backward leakage current and forward on voltage. SOLUTION: The semiconductor device includes: a first semiconductor layer 11 of a first conductivity type; a second semiconductor layer 12 of a second conductivity type, which is embedded at a predetermined depth L1 from a principal surface 11a of the semiconductor layer 11 and gradually increases in cross section from the side of the principal surface 11a toward the side of the opposite surface from the principal surface 11a; a metal layer 13 which comes into contact with the principal surface 11a of the first semiconductor layer 11 to form a Schottky junction with the first semiconductor layer 11; and a high-resistance region 14 which is formed from the second semiconductor layer 12 toward the principal surface 11a of the first semiconductor layer 11 and has higher specific resistance than the first semiconductor layer 11. COPYRIGHT: (C)2010,JPO&INPIT |
