SEMICONDUCTOR DEVICES BASED ON COALESCED NANO-ROD ARRAYS
摘要
Semiconductor devices are fabricated using semiconductor nano-rod arrays, which are merged through coalescence into a continuous planar layer after the nano-rods in the nano-rod array are fabricated by growth or etching. Merging of the nano-rods through coalescence into a continuous layer is achieved by tuning the growth conditions into a regime allowing epitaxial lateral overgrowth.
申请公布号
WO2006060599(A3)
申请公布日期
2010.02.18
申请号
WO2005US43511
申请日期
2005.12.02
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;MISHRA, UMESH, K.;KELLER, STACIA