METHOD OF FORMING A FLASH MEMORY DEVICE

摘要

PURPOSE: A method for forming a flash memory device is provided to improve uniform distribution of an impurity included in a floating gate by performing treatment process for applying the impurity on the surface of a tunnel insulating film and forming a first conductive film for floating gate at high temperature. CONSTITUTION: A gate insulating layer is formed on the semiconductor substrate(100). The gate insulating layer is formed as an oxide layer. A first impurity is formed on the surface of a gate insulating layer(102a). An undoped conductive film(104) is formed on the upper side of the gate insulating layer by the first impurity. A doped conductive film is formed on the upper side of the undoped conductive film. A second impurity included in the doped conductive film is diffused to the undoped conductive film.