| 摘要 |
PURPOSE: A fuse of a semiconductor device and a method for manufacturing the same are provided to prevent damage for the fuse and an electrical short-circuit by forming the fuse with a multilayer structure performing repair process. CONSTITUTION: A second conductive pattern(202) is formed on the top of a first conductive pattern(201) and is spaced apart with a preset-gap to the first conductive pattern. The second conductive pattern includes an overlap part(202A) which is overlapped to the end of the first conductive pattern. An air gap is formed between the overlap part and the first conductive pattern. An insulating layer(206) includes an open area exposing the top of the first conductive pattern. A line-width of the overlap part is identical to or wider than a line-width of the first conductive pattern. The overlap part includes support film expanded below the overlap part.
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