发明名称 RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
摘要 A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.
申请公布号 WO2010018039(A1) 申请公布日期 2010.02.18
申请号 WO2009EP58898 申请日期 2009.07.13
申请人 ASML NETHERLANDS B.V.;KEMPEN, ANTONIUS;BANINE, VADIM;IVANOV, VLADIMIR;LOOPSTRA, ERIK 发明人 KEMPEN, ANTONIUS;BANINE, VADIM;IVANOV, VLADIMIR;LOOPSTRA, ERIK
分类号 G03F7/20;G21K1/00 主分类号 G03F7/20
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