| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which can have an upper/lower electrode structure, the nitride semiconductor light-emitting element being excellent in internal quantum efficiency, light extraction efficiency and drive voltage, and further excellent in mass-productivity; and to provide a method of manufacturing the same. <P>SOLUTION: Disclosed are the nitride semiconductor light-emitting element including a reflective layer 105 made of a dielectric, a transparent conductive layer 106, a p-type nitride semiconductor layer 109, a light-emitting layer 110, and an n-type nitride semiconductor layer 111 in this order; and the method of manufacturing the same. The transparent conductive layer 106 is preferably made of a conductive metal oxide or n-type nitride semiconductor, and the reflective layer 105 made of the dielectric preferably has a laminate structure formed by laminating a layer made of a dielectric having a high refractive index and a layer made of a dielectric having a low refractive index alternately. <P>COPYRIGHT: (C)2010,JPO&INPIT |
