发明名称 LIGHT-EMITTING DIODE COMPOSED OF SEMICONDUCTOR MATERIAL, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting diode composed of a semiconductor material. <P>SOLUTION: The light-emitting diode includes a structure (1) composed of a first conductive type semiconductor material, and an electric polarization means. The structure (1) has a first face (2) and a first region of the first face (2) is in contact with a pad (5) composed of a semiconductor material of a second conductive type which is opposite to the first conductive type. The polarization means includes: an electric contact (7) formed on the pad (5); an electric contact (8) formed on the first face or second face of the structure (1); and a gate (3) formed on a second region of the first face, separated from the first face by an insulating layer (4) and composed of a conductive material. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010041048(A) 申请公布日期 2010.02.18
申请号 JP20090172078 申请日期 2009.07.23
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 ROBIN IVAN-CHRISTOPHE;FERRET PIERRE;ROTHMAN JOHAN
分类号 H01L33/28;H01L33/30;H01L33/32;H01L33/34 主分类号 H01L33/28
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