发明名称 |
LIGHT-EMITTING DIODE COMPOSED OF SEMICONDUCTOR MATERIAL, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode composed of a semiconductor material. <P>SOLUTION: The light-emitting diode includes a structure (1) composed of a first conductive type semiconductor material, and an electric polarization means. The structure (1) has a first face (2) and a first region of the first face (2) is in contact with a pad (5) composed of a semiconductor material of a second conductive type which is opposite to the first conductive type. The polarization means includes: an electric contact (7) formed on the pad (5); an electric contact (8) formed on the first face or second face of the structure (1); and a gate (3) formed on a second region of the first face, separated from the first face by an insulating layer (4) and composed of a conductive material. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010041048(A) |
申请公布日期 |
2010.02.18 |
申请号 |
JP20090172078 |
申请日期 |
2009.07.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ROBIN IVAN-CHRISTOPHE;FERRET PIERRE;ROTHMAN JOHAN |
分类号 |
H01L33/28;H01L33/30;H01L33/32;H01L33/34 |
主分类号 |
H01L33/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|