| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for preventing scattering of scrap metal generated in ultrasonic bonding of wiring with a lead. <P>SOLUTION: A semiconductor device includes a wiring pattern 3 formed on an insulating substrate 2, a semiconductor element mounted on the wiring pattern and a lead frame 5 mounted on the wiring patter by ultrasonic bonding. A resin 6 is applied around the ultrasonic-bonded lead frame. Scattering of the scrap metal generated in connection of the substrate wiring with the external connection lead by ultrasonic bonding is prevented to reduce failures such as element breaking and insulation failures caused by the scrap metal to increase productivity. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
