| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer, in which a wafer reduced in roughness due to a surface reforming heat treatment and having less sticking of foreign matter and less surface layer defects is obtained. SOLUTION: The method of manufacturing the semiconductor wafer includes an etching step S7 of etching the wafer, a surface reforming step S12 of reforming a surface of the wafer, a first thickness measuring step S13 of measuring the thickness of the wafer after the surface reforming step S12 or between the etching step S7 and surface reforming step S12, main surface polishing steps S15 and S16 of polishing a main surface of the wafer, a second thickness measuring step S18 of measuring the thickness of the wafer after the main surface polishing steps S15 and S16, an actual polishing thickness calculating step S19 of calculating an actual polishing thickness of the wafer in the main surface polishing steps S15 and S16 by comparing the thickness obtained by the first thickness measuring step S13 with the thickness obtained by the second thickness measuring step S18, and a determination step S20 of determining whether the quality of the wafer is good on the basis of a maximum polishing thickness and a minimum polishing thickness of the wafer obtained by the main surface polishing steps S15 and S16. COPYRIGHT: (C)2010,JPO&INPIT |
