| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser device, in which crystal defects are hard to occur, with high safety. Ž<P>SOLUTION: The method of manufacturing the semiconductor laser device includes a step of forming a GaAs layer, a step of forming a protective layer, a step of activating impurities, and a step of removing the protective layer. In the GaAs layer formation step, a GaAs layer containing GaAs is formed on the surface of a precursor 11 of the semiconductor laser device. In the protective layer formation step, protective layers (23 and 67) containing Al, Ga, and As are formed. In the impurity activation step, the temperature of GaAs layer formed in the GaAs layer formation step is raised to activate predetermined impurities in the GaAs layer. In the protective layer removing step, the protective layers (23 and 67) formed in the protective layer formation step are removed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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