| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial growth apparatus restraining an automatic dope of a thin film from being formed, by preventing turbulent flow of a material gas. Ž<P>SOLUTION: The epitaxial growth apparatus 10 includes: a reaction container 11 formed like a box and used to house a semiconductor wafer 13; and a gas supply source 12 for flowing a gas to generate a gas flow from one end to the other end in the inside of the reaction container. A gas flow regulating member 19 for forming a gas chamber between itself and the one end of the reaction container is provided on the one end side of the reaction container so as to spread in a width direction, a plurality of gas introducing channels 19a, 19b for dividing the material gas supplied into the gas chamber from the gas supply source and flowing the divided gas to the surrounding of a wafer are formed in the gas flow regulating member, and the plurality of gas introducing channels are formed in two or three rows in a direction perpendicular to the gas flow regulating member and its number is 10-40 in the width direction. Partitions 21 for dividing the gas chamber into a plurality of sub-gas changers arranged in the width direction are provided, gas supply ports for supplying the gas to the plurality of sub-gas chambers are formed, and control means for controlling the gas amount to be supplied to the plurality of sub-gas chambers are further provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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