| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device allowing removal of an outside sidewall without damaging a sidewall serving as a base, to thereby form a connection hole reaching source/drain in a self-aligned manner between gate electrodes with reduced space. Ž<P>SOLUTION: A gate structure A is formed on a semiconductor substrate 1, and a non-doped silicon insulation film 11 and an impurity-doped nitride silicon film 13 are formed in this order. Anisotropic etching is performed to the films 11, 13 to form a first sidewall 11a and a second sidewall 13a on a sidewall of the gate structure A. A source/drain diffusion layer 15 is formed on a surface side of the semiconductor substrate 1, and the second sidewall 13a is selectively removed by wet etching using an alkaline etching solution. An inter-layer insulation film is formed on the semiconductor substrate 1, and a connection hole reaching the source/drain diffusion layer 15 is formed in the inter-layer insulation film by etching wherein the first sidewall 11a is used as a stopper. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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