Semiconductor Devices with a Field Shaping Region

摘要

A semiconductor device includes a semiconductor region having a pn junction and a field shaping region located adjacent the pn junction to increase the reverse breakdown voltage of the device. The field shaping region is coupled via capacitive voltage coupling regions to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction and the device is non-conducting, a capacitive electric field is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region. The electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region in the semiconductor region.