发明名称 |
COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES |
摘要 |
<p>Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.</p> |
申请公布号 |
WO2009135182(A3) |
申请公布日期 |
2010.02.18 |
申请号 |
WO2009US42611 |
申请日期 |
2009.05.01 |
申请人 |
INTERMOLECULAR, INC.;SHANKER, SUNIL;CHIANG, TONY |
发明人 |
SHANKER, SUNIL;CHIANG, TONY |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|