发明名称 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES
摘要 <p>Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.</p>
申请公布号 WO2009135182(A3) 申请公布日期 2010.02.18
申请号 WO2009US42611 申请日期 2009.05.01
申请人 INTERMOLECULAR, INC.;SHANKER, SUNIL;CHIANG, TONY 发明人 SHANKER, SUNIL;CHIANG, TONY
分类号 H01L21/205 主分类号 H01L21/205
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