NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting diode and a manufacturing method thereof are provided to improve the electrical characteristic of a GaN layer by forming the nitride gallium layer of a conical shaped. CONSTITUTION: A low temperature gallium nitride buffer layer(11) and a nitride gallium film(12) are successively formed on a substrate(10). A nano structure nitride gallium film(19) is formed on the nitride gallium film through a hot gas processing. An n-type nitride gallium film(13), and a light-emitting layer(14) and a p-type nitride gallium film(15) are successively formed on the nano structure nitride gallium film. A first electrode layer(16) is formed on the p-type nitride gallium film. A second electrode layer(17) is formed in a part of the first electrode layer.