发明名称 CHARGED PARTICLE RADIATION DEVICE, METHOD OF MANUFACTURING RESISTANCE, AND METHOD OF MANUFACTURING LARGE-SCALE INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged particle radiation device improved in resolution by reducing effect on a resistance value caused by an ambient temperature change and providing a circuit for suppressing fluctuation of a gain of an operational amplifier of a control circuit. <P>SOLUTION: A control means for controlling a deflection means for deflecting a charged particle radiation includes an amplification circuit. The amplification circuit includes a resistor having a structure in which a first resistance of which a resistance value change to an ambient temperature of itself has a first property, and a second resistance of which a resistance value change to an ambient temperature of itself has a property opposite to the first property are integrated. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010040346(A) 申请公布日期 2010.02.18
申请号 JP20080202600 申请日期 2008.08.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ABE HIDEKI
分类号 H01J37/147;H01C7/02;H01C7/04;H01C13/02;H01C17/00 主分类号 H01J37/147
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