| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily manufacture a stable thermoelectric semiconductor having p-type thermoelectric characteristics even at high temperature, when sintering and manufacturing the thermoelectric semiconductor expressed by general chemical formula: Mg<SB>X</SB>Si<SB>1-Y</SB>Sn<SB>Y</SB>with single phase excellent thermoelectric characteristics composed of the metals of Mg, Sn and Si. <P>SOLUTION: In a chemical composition of an intermetallic compound of Mg<SB>X</SB>Si<SB>1-Y</SB>Sn<SB>Y</SB>, a sintered compact composition X, Y when it is sintered satisfies the ranges of 1.98≤X≤2.01 and 0.72≤Y≤0.95, and, as a dopant, at least one metal selected from the 1A group alkali metals and copper (Cu), silver (Ag) and gold (Au) in the IB group is added, so as to obtain a thermoelectric semiconductor stable even at high temperature. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
