发明名称 FLASH MEMORY STORAGE SYSTEM AND DATA WRITING METHOD THEREOF
摘要 A flash memory storage system and a data writing method thereof are provided. The flash memory storage system includes a controller, a connector, a cache memory, a SLC NAND flash memory and a MLC NAND flash memory. When the controller receives data to be written into the MLC NAND flash memory from a host system, the data is temporarily stored in the cache memory first and then is written into the MLC NAND flash memory from the cache memory. And, the controller may backup the data stored in the cache memory to the SLC NAND flash memory. Accordingly, it is possible to reduce a response time for a flush command, thereby improving a performance of the flash memory storage system.
申请公布号 US2010042773(A1) 申请公布日期 2010.02.18
申请号 US20080263040 申请日期 2008.10.31
申请人 PHISON ELECTRONICS CORP. 发明人 YEH CHIH-KANG
分类号 G06F12/00 主分类号 G06F12/00
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