| 摘要 |
A substrate processing apparatus includes a vacuum processing vessel, a partition which is made of a conductive material, and partitions the interior of the vacuum processing vessel into a first space for generating a plasma, and a second space for processing a substrate by the plasma, a high-frequency electrode for plasma generation installed in the first space, and a substrate holding mechanism which is installed in the second space and holds the substrate. The partition has a plurality of through holes which allow the first and second spaces to communicate with each other. The through holes are covered with a covering material having a recombination coefficient higher than that of the conductive material.
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