| 摘要 |
A method for manufacturing a semiconductor device, includes: bringing a first major surface of a first substrate into close contact with a second major surface of a second substrate being different in thermal expansion coefficient from the first substrate at a first temperature higher than room temperature; and bonding the first substrate and the second substrate by heating the first substrate and the second substrate to a second temperature higher than the first temperature with the first major surface being in close contact with the second major surface.
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