NOR TYPE FLASH MEMORY CELL AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A flash memory cell and a method for manufacturing the same are provided to form a floating gate electrode and a control gate electrode without lithography process by stacking stacked gate electrodes on the both side of a sacrificing pattern. CONSTITUTION: A semiconductor substrate(100) includes an active area. A source area(150) and drain areas(120) are formed in the active area. The source area is spaced apart from the drain areas formed on the both edge of the active area. A stacked gate electrode(140) is arranged symmetrically between the drain area and the source areas. The stacked gate electrode includes a floating gate electrode(115) with the section of spacer shape and a control gate electrode(130). The control gate electrode including one side of the floating gate electrode is formed into the section of a substantial spacer shape. The floating gate electrode is arranged between the source and the drain regions of each active area in the form of islands.