发明名称 WAFER FOR EVALUATION AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF EVALUATING SEMICONDUCTOR WAFER
摘要 <P>PROBLEM TO BE SOLVED: To provide: a wafer for evaluation, with which a bonding leak of a semiconductor substrate is easily and efficiently evaluated with high sensitivity while the load of the evaluation of the bonding leak on facility cost is lightened; a method of manufacturing the same; and a method of evaluating a semiconductor wafer. Ž<P>SOLUTION: The wafer 6 for evaluation to be used to evaluate the semiconductor wafer includes at least a silicon substrate 1, a polysilicon layer 2 formed by depositing polysilicon doped with a dopant different from a dopant of the silicon substrate 1 on the silicon substrate 1, and a dopant diffusion layer 3 formed by diffusing the dopant of the polysilicon between the silicon substrate 1 and polysilicon layer 2, wherein at least one or more MESA structures where the dopant diffusion layer 3 and polycrystalline silicon layer 2 are laminated in order are formed on the projection portion of the silicon substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010040677(A) 申请公布日期 2010.02.18
申请号 JP20080200106 申请日期 2008.08.01
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 OTSUKI TAKESHI;SAITO HISASHI
分类号 H01L21/66 主分类号 H01L21/66
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