| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor device and a method of manufacturing the semiconductor device which can improve the processability of a compound semiconductor through dry etching. Ž<P>SOLUTION: The semiconductor device manufacturing method of manufacturing a semiconductor device is provided, by forming a mask pattern 11P on an etching object 10, which is a compound semiconductor comprising indium, allowing a plasma formed of a first gas which is a gas mixture formed of two components which are hydrogen iodide gas and boron trichloride which are to be made incident on the etching object 10; and selectively etching the surface of the etching object 10. The compounding ratio which is the ratio of the flow rate of a hydrogen iodide gas to the total flow rate of the gas mixture is 40-60%. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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