| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with the adhesiveness of a lower conductive layer enhanced and a protective film for protecting an MTJ element. SOLUTION: A semiconductor device 90 includes a lower electrode EB1, formed above a semiconductor substrate 100; an MTJ element portion, formed by laminating a lower magnetic film 6, an insulating film 7; an upper magnetic film 8; and an upper electrode ET1, in this order, being formed above the lower electrode EB1, and a protective film 33, formed on the lower electrode EB1 so as to cover the MTJ element portion. The lower electrode EB1 is formed with an amorphousized nitrided metal, the protective film 33 is formed by an insulating film containing nitride. COPYRIGHT: (C)2010,JPO&INPIT
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