| 摘要 |
PROBLEM TO BE SOLVED: To provide an intermediate of a thin-film transistor, and to provide a thin-film transistor. SOLUTION: The thin-film transistor intermediate has: an n<SP>+</SP>amorphous Si ohmic film 4' formed on an n<SP>-</SP>amorphous Si semiconductor film 4; a barrier film 11 formed on the n<SP>+</SP>amorphous Si ohmic film 4'; and a drain electrode film 5 and a source electrode film 6 formed on the barrier film 11. The drain electrode film and the source electrode film contain 0.2-2 mol% Ba formed in contact with the barrier film 11, and 1-20 mol% oxygen. In the thin-film transistor intermediate, a compound copper alloy film 14 is formed, where the compound copper alloy film includes a copper alloy underlayer 12 containing oxygen-barium of which the remaining part is made of Cu and a Cu layer 13 formed on the copper alloy underlayer 12 containing oxygen-barium. The thin-film transistor is obtained by performing plasma hydrogen treatment to the thin-film transistor intermediate. COPYRIGHT: (C)2010,JPO&INPIT
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