发明名称 |
FIELD EFFECT TRANSISTOR WITH SHIFTED GATE |
摘要 |
A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.
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申请公布号 |
US2010039164(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
US20090604525 |
申请日期 |
2009.10.23 |
申请人 |
UNIVERSITY OF MASSACHUSETTS |
发明人 |
MIL'SHTEIN SAMSON;LIESSNER CHRISTOPHER |
分类号 |
H03K3/01 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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