| 摘要 |
<p>An ultra-short channel hybrib power field effect transistor (FET) device that lets current flow from bulk silicon without NPN parasitic. The device includes a JFET component, a first accumulation MOSFET disposed adjacent to the JFET component, and a second accumulation MOSFET disposed adjacent to the JFET component at the bottom of the trench end, or a MOSFET with an isolated gate connecting the source.</p> |
