| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved characteristics of a leak current, or the like. <P>SOLUTION: An SBD 10 has: an n-type GaN layer 13 grown epitaxially on a GaN substrate 11; a Schottky electrode 15 formed on the GaN layer 13; and a back electrode 16. A guard ring 30 in a regular hexagonal ring shape for surrounding the Schottky electrode 15 is provided on the GaN layer 13. The guard ring 30 is made of a second-conductivity-type p-type GaN to the GaN layer 13. The Schottky electrode 15 is in ohmic contact with an inner surface 30a and an upper surface 30c of the guard ring 30. Sides 30a, 30b of the guard ring 30 are m faces. The sides 30a, 30b of the guard ring 30 are subjected to anisotropic wet etching after patterning by plasma etching. With the structure, a leak current is reduced, thus improving a breakdown voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
