Structure, Structure and Method of Using Asymmetric Junction Engineered SRAM Pass Gates

摘要

A design structure, structure and method of using and/or manufacturing structures having asymmetric junction engineered SRAM pass gates is provided. The structure includes an SRAM cell having asymmetric junction-engineered SRAM pass gates with a high leakage junction and a low leakage junction. The asymmetric junction-engineered SRAM pass gates are connected between an internal node and a bit-line node. The high leakage junction is from a body to the internal node and the low leakage junction is from the body to the bit-line node.