发明名称 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE
摘要 A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.
申请公布号 US2010040895(A1) 申请公布日期 2010.02.18
申请号 US20090541594 申请日期 2009.08.14
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HAMADA YOSHITAKA;YAGIHASHI FUJIO;ASANO TAKESHI
分类号 B32B27/28;B32B37/12;C08L83/04 主分类号 B32B27/28
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