| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve an interface property between a silicon layer and a silicide layer by diffusing a rare earth metal included in a rare earth metal layer to an interface between the silicon layer and the silicide layer. CONSTITUTION: A silicon layer(200) is formed on a semiconductor substrate(100). A silicide layer(300) is formed on the silicon layer. A rare earth metal layer(400) is formed on the silicide layer. In nitrogen or argon atmosphere, a thermal treatment for the semiconductor substrate is performed. Cooling for the semiconductor substrate is performed. The silicide layer includes nickel silicide.
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