| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad having a high removing speed and capable of polishing semiconductor materials such as copper, an insulator, a barrier, and a tungsten wafer. <P>SOLUTION: The polishing pad includes a polymeric matrix and hollow polymeric particles, wherein the polymeric matrix is a polyurethane reaction product of a curing agent and an isocyanate-terminated polytetramethylene ether glycol at an NH<SB>2</SB>to NCO stoichiometric ratio of 80 to 97%. The isocyanate-terminated polytetramethylene ether glycol has an unreacted NCO range of 8.75 to 9.05 wt.%. The hollow polymeric particles have an average diameter of 2 to 50 μm and a wt.%<SB>b</SB>and density<SB>b</SB>of constituents forming the polishing pad as the shown formula (1) wt.%<SB>a</SB>*density<SB>b</SB>/density<SB>a</SB>=wt.%<SB>b</SB>. In the formula (1), density<SB>a</SB>is equal to 60g/l, the density<SB>b</SB>is 5 to 500 g/l, and a wt.%<SB>a</SB>is 3.25 to 4.25 wt.%. The polishing pad has a porosity of 30 to 60 vol.%, and a cell structure in the polymeric matrix forms a continuous network surrounding the cell structure. <P>COPYRIGHT: (C)2010,JPO&INPIT |
