| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a both-sided mirror surface semiconductor wafer which includes a front surface and a back surface differing in surface roughness within a predetermined range and has superior flatness by performing finish polishing on one surface of a material wafer by using a both-side polishing device. <P>SOLUTION: The both-sided mirror surface semiconductor wafer whose flatness (GBIR) is ≤0.1 μm is obtained by a method of manufacturing the both-sided mirror surface semiconductor wafer that includes: a both-side polishing step of polishing both the surfaces of the material wafer simultaneously by using the both-side polishing device; a protective film forming step of forming a protective film on one of both the surfaces of the material wafer polished in the both-side polishing step; a finish polishing step of performing the finish polishing on the other surface of the material wafer by using the both-side polishing device; and a protective film removing step of removing the protective film formed on the one surface of the material wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
