THIN FILM TRANSISTOR, SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor thin film transistor substrate improving process efficiency and reliability, and to provide a manufacturing method thereof.

SOLUTION: The oxide semiconductor thin film transistor includes: a gate line formed on an insulating substrate and including a gate electrode; a data line crossing the gate line and including a drain electrode connection part; an oxide semiconductor active layer pattern formed on the periphery of the gate electrode; a passivation layer having a first opening formed on the data line and the oxide semiconductor active layer pattern to expose the drain electrode connection part and a second opening for exposing the oxide semiconductor active layer pattern; and a drain electrode for electrically connecting the oxide semiconductor active layer pattern and the drain electrode connection part by the first and the second openings.

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