| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory device and a memory programming method. <P>SOLUTION: The memory device is provided with a multilevel cell array including a plurality of multilevel cells, a programming unit for programming a first data page in the plurality of multilevel cells and a second data page in the multilevel cell where the first data page is programmed, and a program level stabilization unit for stabilizing a program level of the first data page or the second data page. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
