| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce read average time and also to reduce a stress to be applied on a memory cell when a shift of the threshold voltage caused by an interference between cells does not affect reading. <P>SOLUTION: This memory device includes: a memory cell array in which the memory cells having electrically rewritable electric charge accumulation layers (e.g. floating gates) are arranged; a data writing/reading circuit for writing and reading data in units of pages to/from the memory cell array; a nonvolatile write state information storage means for storing write state information indicating data write state to the memory cell array by the data writing/reading circuit; and a control circuit for controlling the data writing/reading circuit, on the basis of an access page address indicating a page to be read by the data writing/reading circuit, and the write state information stored in the write state information storage means. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
