| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element by which the elemental characteristics are improved. Ž<P>SOLUTION: In the method of manufacturing the semiconductor light-emitting element 10, an oxide film 32 is formed on a side surface 16a of an active layer 16, containing Al exposed through etching by O<SB>2</SB>plasma oxidation treatment. Because the oxide film 32 has a thickness which is sufficiently larger than that of a natural oxide film, the film 32 can be removed with high accuracy in a subsequent step of removing etching. As a result, the side surface 16a of the active layer becomes clean. By covering the side surface 16a of the active layer by a clad layer 18 in this state, generation of crystal defect in the clad layer 18 can be suppressed and the element characteristics of the semiconductor light-emitting element 10 is improved. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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