| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display device of a configuration in which source and drain regions and an LDD (Light Doped Drain) structure are formed in a self-aligned manner in a bottom gate structure, and to provide a method for manufacturing such a display device. Ž<P>SOLUTION: The display device includes: a gate electrode GT stacked on a transparent substrate GA; a semiconductor film S which is stacked on the gate electrode GT and constitutes a thin film transistor TFT with the gate electrode GT; a source electrode ST and a drain electrode DT which are formed on the semiconductor S; an insulating film GI3 which is stacked between the source electrode ST and the drain electrode DT, and the semiconductor film; and a contact hole which is pierced in the insulating film GI3 and connects the source electrode ST and the drain electrode DT to the semiconductor film. In the semiconductor film S, an impurity is injected to at least a connection region which is positioned under the contact hole, and connected to the source electrode ST and the drain electrode DT. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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