| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliability evaluation method of a semiconductor device capable of shortening a test period for reliability evaluation of the semiconductor device by detecting early an ion migration phenomenon. Ž<P>SOLUTION: This reliability evaluation method of the semiconductor device 1 includes an insulation resistance measuring process for measuring an insulation resistance between a cathode electrode 2 and an anode electrode 3 in the semiconductor device 1 by an insulation resistance meter 13 and a conductor resistance meter 14 in a semiconductor reliability evaluation device 11, the first determination process for determining whether or not a measured insulation resistance value is higher than an insulation resistance limit setting value set beforehand, a conductor resistance measuring process for measuring a conductor resistance of the anode electrode 3 in the semiconductor device 1 corresponding to a determination result in the first determination process, and the second determination process for determining whether or not a measured conductor resistance value is lower than a conductor resistance limit setting value set beforehand. In the method, output for evaluating reliability of the semiconductor device 1 is performed corresponding to a determination result in the second determination process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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