| 摘要 |
<P>PROBLEM TO BE SOLVED: To ensure an electrical connection between a switching transistor and a driving transistor, and also to prevent the degradation of a gate insulating film because of via hole formation and bank (or separator) formation. Ž<P>SOLUTION: In an organic semiconductor device 10 including a top gate type switching transistor 11 and a bottom gate type driving transistor 12, the same structure is used both as a source electrode 103 of the switching transistor 11 and a gate electrode 202 of the driving transistor 12, the same structure is used both as a bank layer 105 of the switching transistor 11 and a gate insulating film 203 of the driving transistor 12, and the same structure is used both as a bank layer 205 of the driving transistor 12 and a gate insulating film 107 of the switching transistor 11. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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