| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents the occurrence of hump feature. Ž<P>SOLUTION: The semiconductor device 1 includes: an element isolation film 12 arranged in a semiconductor substrate surface of one conductivity type; a gate electrode 14 whose pair of ends are located on a border of the element isolation film 12 and an element forming region 13; a source region 15 of an inverse conductivity type arranged to sandwich a region directly under the gate electrode 14; a drain region 16; and an impurity diffusion region 17 of one conductivity type formed in the element forming region 13. The source region 15 is estranged from a region 141 of a border side of the element isolation film 12 and the element forming region 13 in the region directly under the gate electrode 14 in the element forming region 13. In the impurity diffusion region 17, a portion thereof which adjoins the region 141 of the border side is arranged between the source region 15 and the element isolation film 12, and contacted with the source region 15 and the region 141 of the border side. The impurity diffusion region 17 is not arranged between the drain region 16 and the element isolation film 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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