| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an air gap structure without increasing a number of processes in manufacturing processes performing silicide processing on the way. Ž<P>SOLUTION: Laminated layers of a gate insulation film 4, a polycrystalline silicon film 5 having a layered structure of gate electrodes MG, SG1 and SG2, an ONO film 6, a polycrystalline silicon film 7 and a silicon nitride film are formed on a silicon substrate 1, and the laminated layers are separated into a width of each gate electrode. Polysilazane is embedded between the electrodes, and then, a spacer 9, a silicon nitride film 10 and a silicon oxide film 11 are formed between the selection gate electrodes SG1 and SG1 and between the selection gate electrodes SG2 and SG2. Cobalt is formed on an upper surface of the polycrystalline silicon film 7 on an upper part of the gate electrodes to be silicided. Next, the polysilazane is removed and a TEOS oxide film 12 is formed in conditions of poor embedding property, to thereby form gaps AG1, AG2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
